Method and apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device

A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:

• providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
• applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
• providing recessed micro-structures in the at least one dielectric layer;
• preparing a surface of the workpiece including the recessed micro-structures with a seed layer for subsequent electrochemical copper deposition;
• electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
• allowing the electrochemically deposited copper layer to self-anneal for a predetermined period of time at ambient room temperature;
• removing copper metallization from the surface of the workpiece except from the recessed microstructures, said removing step occurring after the predetermined period of time has elapsed.

A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:

• providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
• applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
• providing recessed micro-structures in the at least one dielectric layer;
• preparing a surface of the workpiece including the recessed micro-structures with a seed layer for subsequent electrochemical copper deposition;
• electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
• removing copper metallization from the surface of the workpiece except from the recessed micro-structures;
• allowing the electrochemically deposited copper layer to self-anneal at ambient room temperature without subjecting the workpiece to a separate and distinct elevated temperature annealing process.

A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of.

• providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
• applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
• providing recessed micro-structures in the at least one dielectric layer;
• preparing a surface of the workpiece, including the recessed micro-structures, with a seed layer for subsequent electrochemical copper deposition;
• electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
• subjecting the electrochemically deposited copper layer to an annealing process at a temperature below about 100 degrees Celsius.

A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of.

• providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
• applying at least one low-K dielectric layer over a surface of the semiconductor workpiece including the feature;
• providing recessed micro-structures in the at least one low-K dielectric layer;
• preparing a surface of the workpiece, including the recessed micro-structures, with a seed layer for subsequent electrochemical copper deposition;
• electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
• subjecting the electrochemically deposited copper layer to an annealing process at a temperature below which the low-K dielectric layer substantially degrades.