Transistor device and fabrication method thereof
AssigneeTelefonaktiebolaget LM Ericsson (publ)
InventorsHans Norstrom, Torkel Arnborg, Ted Johansson
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Abstract
In the fabrication of a transistor device, particularly a low-voltage high-frequency transistor for use in mobile telecommunications, a method for improving the transistor performance and the high-frequency characteristics, comprising the steps of: providing a semiconductor substrate (1) with an n-doped collector layer (5) surrounded by isolation areas (4); implanting antimony ions into said collector layer such that a thin highly n-doped layer (18) is formed in the uppermost portion of said collector layer; and forming a base on top of said thin highly n-doped layer (18).
Claims16
In the fabrication of a transistor device, particularly a low-voltage high-frequency transistor for use in mobile telecommunications, a method for improving the transistor performance and the high-frequency characteristics comprising the steps of:
- providing a semiconductor substrate having an n-doped collector layer surrounded by isolation areas;
- implanting antimony ions into said collector layer such that a thin highly n-doped layer is formed in an uppermost portion of said collector layer;
- and
- forming a base on top of said thin highly n-doped layer.
A transistor device, particularly a low-voltage high-frequency transistor for use in mobile telecommunications, comprising a thin antimony ion-implanted layer of high doping level located between a collector and a base of the transistor device.
Dependencies are inferred from the claim text.