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US 2001/0055880 A1Published application
Barrier layer buffing after cu cmp
AssigneeApplied Materials, Inc.
InventorsSHIJIAN LI, FRED C. REDECKER, JOHN M. WHITE, RAMIN EMAMI, SEN-HOU KO
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Abstract
Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.
Claims16
A method of planarizing a wafer surface containing:
- an interlayer dielectric having an upper surface and a plurality of spaced apart openings;
- a barrier layer lining the opening and on the upper surface of the interlayer dielectric;
- and
- copper (Cu) or a Cu alloy filling the openings and on the interlayer dielectric;
- the method comprising the sequential steps of:
- chemical mechanical polishing (CMP) the wafer to remove the Cu or Cu alloy layer stopping on the barrier;
- and
- buffing the wafer to remove the barrier layer at zero or reversed selectivity with respect to Cu:
- barrier layer and Cu:
- interlayer dielectric to form a dense array of Cu or Cu alloy features.
7 more elements
Dependencies are inferred from the claim text.