Method of forming trench isolation
AssigneeSharp Kabushiki Kaisha
InventorKenji Tsutsui
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Abstract
A method of forming trench isolation comprising the steps of: burying a plurality of trenches formed in a substrate with a burying material and simultaneously forming a burying material layer on protrusive regions between adjacent trenches, by use of a process for concurrently executing vapor phase growth and etching; conducting an isotropic etching in such a manner as to leave the burying material layer on the protrusive region; and removing the remaining burying material layer by a CMP process for planarization.
Claims14
A method of forming trench isolation comprising the steps of:
- burying a plurality of trenches formed in a substrate with a burying material and simultaneously forming a burying material layer on protrusive region between adjacent trenches, by use of a process for concurrently executing vapor phase growth and etching;
- conducting an isotropic etching in such a manner as to leave the burying material layer on the protrusive region;
- and
- removing the remaining burying material layer by a CMP process for planarization.
A method of forming trench isolation comprising the steps of:
- burying a plurality of trenches formed in a substrate with a burying material and simultaneously forming a burying material layer on protrusive region between adjacent trenches, by use of a process for concurrently executing vapor phase growth and etching;
- and
- removing the remaining burying material layer by a CMP process for planarization,
- wherein the layer of the burying material on the protrusive region between adjacent trenches is a triangular layer whose maximum height is not greater than 0.06 μm.
Dependencies are inferred from the claim text.