Method and apparatus for diffusion of an impurity into a semiconductor wafer with high in-plane diffusion uniformity

Abstract

The present invention provides an apparatus for diffusing an impurity into a semiconductor wafer comprising: a diffusion furnace tube which has a longitudinal center axis extending along a vertical direction and the diffusion tube having at least a gas injector vertically extending in a vicinity of an inner wall of the diffusion furnace tube and the gas injector having a single vertical alignment of a plurality of gas injection nozzles for blowing an impurity gas toward the longitudinal center axis in a first horizontal direction; and a wafer holder for holding at least one semiconductor wafer, the wafer holder being provided in the diffusion furnace tube so that the wafer holder rotates around a rotational axis extending along the vertical axis, whereby the at least one semiconductor wafer rotates around the rotational axis so as to keep a normal of the at least one semiconductor wafer directed in a diametrically outward direction from the rotational center axis.

Dependencies are inferred from the claim text.