Method for making electrical contact with a rear side of a semiconductor substrate during its processing
AssigneeInfineon Technologies AG
InventorsAlbert Birner, Martin Franosch, Matthias Goldbach, Volker Lehmann, Jorn Lutzen
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Abstract
A method for electrically contacting a rear side of a semiconductor substrate when processing the semiconductor substrate includes the step of placing the semiconductor substrate with a substrate rear side on a substrate holder such that an electrically conductive contact layer formed of a semiconductor material is disposed between the semiconductor substrate and the substrate holder.
Claims10
A method for electrically contacting a rear side of a semiconductor substrate when processing the semiconductor substrate, the method which comprises:
- providing a semiconductor substrate having a substrate rear side and a substrate front side disposed opposite from the substrate rear side;
- removing an insulating layer disposed on the substrate rear side;
- and
- placing the semiconductor substrate with the substrate rear side on a substrate holder such that an electrically conductive contact layer formed of a semiconductor material is disposed between the semiconductor substrate and the substrate holder.
A method for electrically contacting a rear side of a semiconductor substrate when processing the semiconductor substrate, the method which comprises:
- providing a semiconductor substrate having a substrate rear side and a substrate front side disposed opposite from the substrate rear side;
- and
- placing the semiconductor substrate with the substrate rear side on a substrate holder such that an electrically conductive contact layer formed of a semiconductor material is disposed between the semiconductor substrate and the substrate holder for electrically contacting the substrate rear side when processing the semiconductor substrate.
Dependencies are inferred from the claim text.