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US 2001/0055846 A1Published application
Method for manufacturing a trench capacitor
AssigneeInfineon Technologies AG
InventorsGustav Beckmann, Moritz Haupt, Anke Krasemann, Alexandra Lamprecht, Dietmar Ottenwalder, Jens-Uwe Sachse, Martin Schrems
Life of this patent
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Abstract
A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.
Claims14
A method for manufacturing a trench capacitor, the method which comprises:
- (a) providing a substrate;
- (b) forming a trench with a lower region and an upper region in the substrate;
- (c) filling the lower region of the trench with a first filler material;
- (d) forming an insulation collar in the upper region of the trench;
- (e) removing the first filler material from the lower region of the trench;
- (f) forming a buried plate as a first capacitor plate in the substrate such that the buried plate is disposed adjacent to the lower region of the trench and using a low-pressure gas phase doping for forming the buried plate;
- (g) forming a dielectric layer as a capacitor dielectric lining the lower region of the trench and an inner side of the insulation collar;
- and
- (h) filling the trench with a conductive second filler material as a second capacitor plate.
6 more elements
A method for manufacturing a trench capacitor, the method which comprises:
- (a) providing a substrate;
- (b) forming a trench with a lower region and an upper region in the substrate;
- (c) filling the lower region of the trench with a first filler material;
- (d) forming an insulation collar in the upper region of the trench;
- (e) removing the first filler material from the lower region of the trench;
- (f) forming a buried plate as a first capacitor plate in the substrate such that the buried plate is disposed adjacent to the lower region of the trench and using a gas phase doping at a pressure below 200 Pascal for forming the buried plate;
- (g) forming a dielectric layer as a capacitor dielectric lining the lower region of the trench and an inner side of the insulation collar;
- and
- (h) filling the trench with a conductive second filler material as a second capacitor plate.
6 more elements
Dependencies are inferred from the claim text.