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US 2001/0055838 A1Published application
Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
AssigneeMatrix Semiconductor, Inc.
InventorsAndrew J. Walker, Mark G. Johnson, N. Johan Knall, Igor G. Kouznetsov, Christopher J. Petti
Life of this patent
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Abstract
A nonvolatile memory array is provided. The array includes an array of nonvolatile memory devices, at least one driver circuit, and a substrate. The at least one driver circuit is not located in a bulk monocrystalline silicon substrate. The at least one driver circuit may be located in a silicon on insulator substrate or in a compound semiconductor substrate.
Claims68
A nonvolatile memory array, comprising:
- an array of nonvolatile memory devices;
- at least one driver circuit;
- and
- a substrate;
- wherein the at least one driver circuit is not located in a bulk monocrystalline silicon substrate.
2 more elements
A nonvolatile memory array, comprising:
- a monocrystalline silicon substrate;
- at least one driver circuit formed above the substrate;
- and
- an array of nonvolatile memory devices formed above the substrate.
1 more element
A method of making a nonvolatile memory array, comprising:
- forming at least one driver circuit above a substrate or in a semiconductor substrate other than a monocrystalline silicon substrate;
- and
- forming an array of nonvolatile memory devices.
Dependencies are inferred from the claim text.