Etching method
OwnerManfred Engelhardt, Volker Weinrich +1inventors
InventorsManfred Engelhardt, Volker Weinrich, Carlos Mazure-Espejo
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Abstract
The method deals with plasma-structuring by etching, in particular with the plasma-structuring of materials at high temperatures. The application of a chemical etching process at high temperatures is made possible by the prior deposition of a polyimide mask.
Claims7
An improved plasma-etching process at temperatures above 100° C., which comprises applying a polyimide mask prior to etching a structure.
A method for the plasma-etching of metals, which comprises applying a polyimide mask to a metal layer, and chemically etching the metal layer, aided by the mask, with a plasma etching process at temperatures between 300° C. and 500° C.
Dependencies are inferred from the claim text.