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US 2001/0054551 A1Published application
Sputtering apparatus
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkira Okuda, Shigeru Namiki, Kiyoshi Saeki, Toshiyuki Fujioka
Life of this patent
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Abstract
During sputtering for use in thin film deposition, anomalous discharge is prevented from generating between a target and a backing plate, and a target presser. In the target presser also serving as an earth shield and a deposition preventing plate, an insulating member staying in contact with the sputtering target or the backing plate is provided with a recess constituted of two or more different depths so that the recess does not come in contact with the sputtering target or the backing plate.
Claims6
A sputtering apparatus comprising:
- a reactive chamber inside of which can be kept in a vacuum;
- a vacuum exhaust pump which evacuates the inside of the reactive chamber to produce a pressure-reduced atmosphere therein;
- a gas supply system which supplies gas into the reactive chamber;
- a substrate holder housed in the reactive chamber, for mounting thereon a substrate to be treated with plasma;
- a cathode disposed opposite to the substrate;
- a power source which applies a voltage to the electrode;
- a deposition preventing plate disposed along the circumference of the substrate;
- and
- an insulating member interposed between the cathode and the deposition preventing plate,
- wherein said insulating member disposed on the cathode and serving as a target presser has a recess.
7 more elements
Dependencies are inferred from the claim text.