Method and apparatus for stabilizing high pressure oxidation of a semiconductor device

A method for oxidizing a portion of a silicon substrate in an atmosphere comprising:

• providing said silicon substrate;
• changing the temperature of said silicon substrate to a temperature of at least about 600° C.;
• providing a gas atmosphere of N2O, said gas atmosphere having a pressure of at least about five atmospheres;
• contacting said silicon substrate with a portion of said gas atmosphere of N2O having a pressure of at least about five atmospheres;
• and
• contacting a portion of said gas atmosphere of N2O with a catalytic matrix.

A method for oxidizing a portion of a silicon substrate in a gas atmosphere comprising:

• providing said silicon substrate having a temperature in a range of about 600° C. to 800° C.;
• providing a gas atmosphere of N2O, said gas atmosphere having a pressure of at least about five atmospheres;
• and
• contacting a portion of said gas atmosphere of N2O with a catalytic matrix.

A method for oxidizing a portion of a silicon substrate in a gas atmosphere comprising:

• providing said silicon substrate having a temperature in a range of about 600° C. to 800° C.;
• providing a gas atmosphere of N2O, said gas atmosphere having a pressure of in a range of at least about five atmospheres to about twenty five atmospheres;
• and
• contacting a portion of said gas atmosphere with a catalytic matrix.

A method for oxidizing a portion of a silicon substrate in a gas atmosphere comprising:

• providing a chamber;
• providing said silicon substrate having a temperature of at least about 600° C. located in the chamber;
• providing a gas atmosphere of N2O, said gas atmosphere having a pressure of at least about five atmospheres in the chamber;
• providing a catalytic matrix in said chamber;
• and contacting a portion of said gas atmosphere with said catalytic matrix.

A method for oxidizing a portion of a silicon substrate in a gas atmosphere comprising:

• providing a chamber having a gas inlet;
• providing said silicon substrate having a temperature of at least about 600° C. located in the chamber;
• providing a gas atmosphere of N2O through the gas inlet of the chamber, the N2O gas atmosphere attaining a pressure of at least five atmospheres;
• providing a catalytic matrix in said chamber;
• and
• contacting a portion of said gas atmosphere of N2O with said catalytic matrix.

A method for oxidizing a portion of a silicon substrate in a gas atmosphere comprising:

• providing a chamber having a gas inlet;
• providing said silicon substrate having a temperature in a range of at least about 600° C. to 800° C. located in the chamber;
• providing a gas atmosphere of N2O through the gas inlet of the chamber, the gas atmosphere of N2O attaining a pressure in a range of at least about five atmospheres to about twenty five atmospheres;
• providing a catalytic matrix in said chamber;
• and
• contacting a portion of said gas atmosphere of N2O with said catalytic matrix.

A method for oxidizing a portion of a silicon substrate in a gas atmosphere comprising:

• providing said silicon substrate:
• providing an atmosphere having a temperature of at least about 600° C.;
• providing a gas atmosphere of N2O, said gas atmosphere of N2O having a pressure of at least about five atmospheres:
• contacting said silicon substrate with a portion of said gas atmosphere of N2O having a pressure of at least about five atmospheres;
• and
• contracting a portion of said gas atmosphere with said catalytic matrix.

A method for oxidizing a portion of a silicon substrate in a gas atmosphere comprising:

• providing a silicon substrate;
• elevating said silicon substrate to a temperature in a range of about 600° C. to about 800° C.;
• providing a gas atmosphere of N2O, said gas atmosphere of N2O having a pressure of at least about five atmospheres to said silicon substrate;
• and
• contracting a portion of said gas atmosphere of N2O with said catalytic matrix.