Plasma deposition of spin chucks to reduce contamination of silicon wafers

An apparatus for delivering a fluidic media to a wafer, comprising:

• a housing defining a process chamber;
• a fluidic media delivery member coupled to the process chamber;
• a spin chuck positioned in the process chamber, the spin chuck including a wafer support surface and a skirt positioned at a periphery and in a non-planar relationship to the wafer support wafer surface;
• and
• a vacuum supply line coupled to the spin chuck.

A wafer processing apparatus, comprising:

• a housing;
• a first wafer transporter positioned in the housing;
• a second wafer transporter positioned in the housing;
• and
• a process station coupled to each of the first and second wafer transporters, the process station including a plurality of wafer processing modules, each of a module including a spin chuck having a wafer support surface coated with a coating material.

A method of reducing contamination of a wafer, comprising:

• providing a spin chuck with a wafer support surface;
• positioning the spin chuck in a treatment chamber;
• and
• applying a coating material to the wafer support surface.

A method of applying a material to a wafer, comprising:

• providing a spin chuck with a wafer support surface coated with a coating material;
• positioning the wafer on the wafer support surface;
• spinning the spin chuck in a process chamber;
• delivering the material to the wafer while the spin chuck is spinning;
• and
• forming a uniform layer of material on the wafer.

A method of applying a material to a wafer, comprising:

• providing a spin chuck with a wafer support surface and a skirt positioned at a periphery and in a non-planar relationship to the wafer support wafer surface;
• positioning the wafer on the wafer support surface;
• spinning the spin chuck in a process chamber;
• delivering the material to the wafer while the spin chuck is spinning;
• and
• forming a uniform layer of material on the wafer.