Method for removing contaminant compounds respectively having benzene ring therein from surface of Si layer and method for producing semiconductor device including step for removing contaminant compounds
AssigneeOki Electric Industry Co., Ltd.
InventorMasahiro Takahashi
Life of this patent
Estimating the term…
Abstract
A method for removing contaminant compounds respectively having a benzene ring therein from the surface of an Si layer, the method containing enter a step for causing the Si layer to contact with the air, oxygen or ozone under a heated condition or a step for causing the Si layer to contact with a mixture of sulfuric acid and hydrogen peroxide or a mixture of pure water and ozone. The method can be applicable to methods for providing a field effect transistor.
Claims16
A method for removing contaminants from a surface of an Si layer comprising:
- a step for causing said Si layer to contact with a gas selected from a group of the air, oxygen and ozone under a heated condition, for causing silylyzation to occur for said contaminants to cleave a benzene ring of at least one of said contaminants, during a process for producing a semiconductor device.
A method for removing contaminants from a surface of an Si layer comprising:
- a step for causing said Si layer to contact with a liquid selected from a group of a mixture of sulfuric acid and hydrogen peroxide and a mixture of pure water and ozone for causing silylyzation to occur for said contaminants to cleave a benzene ring of at least one of said contaminants, during a process for producing a semiconductor device.
A method for producing a field effect transistor comprising:
- a step for removing contaminants from a surface of an Si layer further comprising:
- a step for causing said Si layer to contact with a gas selected from a group of the air, oxygen and ozone under a heated condition, for causing silylyzation to occur for said contaminants to cleave a benzene ring of at least one of said contaminants, during a process for producing a semiconductor device.
A method for producing a field effect transistor comprising:
- a step for causing said Si layer to contact with a liquid selected from a group of a mixture of sulfuric acid and hydrogen peroxide and a mixture of pure water and ozone for causing silylyzation to occur for said contaminants to cleave a benzene ring of at least one of said contaminants, during a process for producing a semiconductor device.
A method for producing a semiconductor device containing a capacitor therein comprising:
- a step for causing said Si layer to contact with a gas selected from a group of the air, oxygen and ozone under a heated condition, for causing silylyzation to occur for said contaminants to cleave a benzene ring of at least one of said contaminants, during a process for producing a semiconductor device.
A method for producing a semiconductor device containing a capacitor therein comprising:
- a step for causing said Si layer to contact with a liquid selected from a group of a mixture of sulfuric acid and hydrogen peroxide and a mixture of pure water and ozone.
Dependencies are inferred from the claim text.