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US 2001/0044208 A1Published application
Etchant and method for fabricating a semiconductor device using the same
AssigneeMatsushita Electronics Corporation
InventorsHidetoshi Ishida, Atsushi Noma, Daisuke Ueda
Life of this patent
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Abstract
An etchant for etching at least one of a titanium material and silicon oxide includes a mixed liquid of HCl, NH4F and H2O. When the etchant has a NH4F/HCl molar ratio of less than one, only the titanium material is etched. When the etchant has a NH4F/HCl molar ratio of more than one, only silicon oxide is etched. When the etchant has a NH4F/HCl molar ratio of one, the titanium material and silicon oxide are etched at the same rate.
Claims7
An etchant for etching at least one of a titanium material and silicon oxide, comprising a mixed liquid of HCl, NH4F and H2O.
Dependencies are inferred from the claim text.