Direct writing of low carbon conductive material

A method for forming platinum, comprising:

• providing a substrate assembly having a surface in a chamber;
• providing a stream of platinum containing precursor to a region proximate the surface of the substrate assembly where platinum is to be deposited, the stream of platinum containing precursor being provided at a flow rate of about 0.01 sccm to about 10 sccm;
• providing a stream of oxygen containing gas with the stream of platinum containing precursor to the region proximate the surface of the substrate assembly where the platinum is to be deposited, the stream of oxygen containing gas being provided at a flow rate of about 0.001 sccm to about 10 sccm;
• maintaining the chamber at a temperature in a range of about 20° C. to about 300° C.;
• maintaining the chamber at a pressure in a range of about 10−5 torr to about 10−9;
• and
• scanning a focused beam over the surface of the substrate assembly in the presence of the stream of platinum containing precursor and the stream of oxygen to deposit the platinum on the surface.

A method for direct writing platinum, comprising:

• providing a substrate assembly having a surface upon which platinum is to be deposited;
• providing a platinum containing precursor proximate the surface of the substrate assembly;
• and
• directing a focused beam towards the surface of the substrate assembly in the presence of the platinum containing precursor and in an oxygen atmosphere to form platinum on the surface.

A method for providing a conductive material, comprising:

• providing a substrate assembly having a surface;
• and
• providing a stream of a precursor containing conductive material to a region proximate the surface of the substrate assembly where the conductive material is to be deposited;
• providing a stream of reaction gas to the region proximate the surface of the substrate assembly where the conductive material is to be deposited, wherein the reaction gas is one of an oxygen or hydrogen containing gas;
• and
• scanning a focused beam over the surface of the substrate assembly in the presence of the stream of precursor containing conductive material and the stream of the reaction gas to deposit the conductive material on the surface.

A method for line repair, comprising:

• providing a substrate assembly having a surface including a first conductive region and a second conductive region, the first and second conductive regions separated by a line repair region upon which platinum is to be formed to connect the first conductive region to the second conductive region;
• providing a stream of platinum containing precursor to the line repair region proximate the surface of the substrate assembly where platinum is to be formed;
• providing a stream of oxygen containing gas to the line repair region proximate the surface of the substrate assembly where the platinum is to be formed;
• and
• directing a focused beam towards the surface of the substrate assembly in the presence of the stream of platinum containing precursor and the stream of oxygen containing gas in the line repair region to form platinum on the surface for connection of the first conductive region to the second conductive region.

A method for providing a conductive material, the method comprising:

• providing a substrate assembly having a surface;
• simultaneously providing a platinum containing precursor and an oxygen containing gas to a region proximate the surface of the substrate assembly where platinum is to be deposited;
• and
• directing a focused beam towards the surface of the substrate assembly in the presence of the platinum containing precursor and the oxygen containing gas in the region proximate the surface of the substrate assembly to deposit the platinum on the surface.

A system for use in providing a conductive material, the system comprising:

• a chamber in which to position a substrate assembly having a surface;
• a precursor delivery system comprising:
• a precursor source to provide a platinum containing precursor;
• and
• a precursor delivery apparatus operable to deliver the platinum containing precursor to a region proximate the surface of the substrate assembly where platinum is to be deposited when the substrate assembly is positioned in the chamber;
• a gas source delivery system comprising:
• a gas source to provide an oxygen containing gas;
• and
• a gas delivery apparatus operable to deliver the oxygen containing gas to the region proximate the surface of the substrate assembly where platinum is to be deposited when the substrate assembly is positioned in the chamber;
• and
• a focused beam apparatus operable to direct a focused beam towards the surface of the substrate assembly in the presence of the platinum containing precursor and the oxygen containing gas in the region proximate the surface of the substrate assembly to deposit the platinum on the surface when the substrate assembly is positioned in the chamber.

A method for direct writing a conductive material, the method comprising:

• providing a substrate assembly having a surface;
• providing a precursor comprising conductive material to a region proximate the surface of the substrate assembly where the conductive material is to be deposited;
• providing an oxygen containing gas;
• and
• directing a focused beam towards the surface of the substrate assembly in the presence of the precursor comprising conductive material and an oxygen containing gas proximate the surface of the substrate assembly to form the conductive material on the surface.