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US 2001/0044204 A1Published application
Method for making semiconductor devices having gradual slope contacts
AssigneeMicron Technology, Inc.
InventorSanh Dang Tang
Life of this patent
Estimating the term…
Abstract
The present invention is directed to a method for forming semiconductor devices and semiconductor device precursors having gradual slope contacts. The method for forming a semiconductor precursor includes the steps of: forming a layer of conductive material in a first layer; forming a layer of a hard mask material onto at least a portion of the first layer; etching the layer of hard mask material to expose a portion of the first layer; forming facets on the layer of hard mask material; and forming a via in the first layer such that the via extends through the first layer to expose at least a portion of the layer of conductive material.
Claims11
A method for forming a semiconductor device precursor comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- etching said layer of hard mask material to expose a portion of said first layer;
- forming facets on said layer of hard mask material;
- and
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material.
3 more elements
A method for forming a semiconductor device precursor comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- forming a layer of etch resistant material on said layer of hard mask material;
- patterning said layer of etch resistant material;
- etching said layer of hard mask material to expose at least a portion of said first layer;
- forming facets on said layer of hard mask material;
- and
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material.
5 more elements
A method for forming a semiconductor device precursor comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- forming a layer of etch resistant material on said hard mask material;
- patterning said layer of etch resistant material;
- etching said layer of hard mask material to expose at least a portion of said first layer and to form opposing sidewalls in at least a portion of said first layer;
- bombarding said layer of hard mask material with an ion source to form facets in said layer of hard mask material;
- depositing a portion of the material removed from said layer of hard mask material on opposite sidewalls of said first layer;
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material.
5 more elements
A method for forming a semiconductor device comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- etching said layer of hard mask material to expose at least a portion of said first layer and to provide said layer of hard mask material with facets;
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material;
- and
- forming a metal interconnect in said via, said metal interconnect contacting at least a portion of said layer of conductive material.
3 more elements
A semiconductor device precursor having a gradual slope contact formed by the method comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- etching said layer of hard mask material to expose a portion of said first layer;
- forming gradual slope contacts on said layer of hard mask material;
- and
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material.
3 more elements
A semiconductor device precursor having a gradual slope contact formed by the method comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- forming a layer of etch resistant material on said layer of hard mask material;
- patterning said layer of etch resistant material;
- etching said layer of hard mask material to expose at least a portion of said first layer;
- forming gradual slope contacts on said layer of hard mask material;
- and
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material.
5 more elements
A semiconductor device precursor having a gradual slope contact formed by the method comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- forming a layer of etch resistant material on said hard mask material;
- patterning said layer of etch resistant material;
- etching said layer of hard mask material to expose at least a portion of said first layer and to form opposing sidewalls in at least a portion of said first layer;
- bombarding said hard mask material with an ion source to form gradual slope contacts on said layer of hard mask material;
- depositing a portion of the material removed from said layer of hard mask material on opposite sidewalls of said first layer;
- and
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material.
6 more elements
A semiconductor device having a gradual slope contact formed by the method comprising the steps of:
- forming a layer of conductive material in a first layer;
- forming a layer of a hard mask material onto at least a portion of said first layer;
- etching said layer of hard mask material to form a sidewall in said first layer and to provide said hard mask material with gradual slope contacts;
- forming a via in said first layer, said via extending through said first layer to expose at least a portion of said layer of conductive material;
- and
- forming a metal interconnect in said via, said metal interconnect contacting at least a portion of said layer of conductive material.
3 more elements
A method for making a semiconductor device having a gradual slope contact comprising the steps of:
- forming a layer of dielectric material on a substrate, wherein said dielectric material is selected from the group consisting of silicon oxide, silicon nitride and polyimide film and wherein said substrate is selected from the group consisting of aluminum, copper and polycrystalline silicon;
- forming a layer of conductive material within said layer of dielectric material, said layer of conductive material being surrounded by said layer of dielectric material;
- depositing a layer of hard mask material on said layer of dielectric material, said hard mask material being selected from the group consisting of tungsten, tungsten silicide, polycrystalline silicon, titanium, titanium nitride, titanium silicide and titanium-tungsten alloys;
- forming a photoresist layer on said layer of hard mask material;
- exposing said photoresist layer to form a pattern on said photoresist layer;
- etching said layer of hard mask material according to said pattern on said photoresist layer to expose said layer of dielectric material and to form sidewalls in said exposed portion of said layer of dielectric material;
- removing said photoresist layer;
- anisotropically etching said layer of hard mask with an inert material to form gradual slope contacts on said layer of hard mask material;
- depositing said eroded hard mask material onto said sidewalls of said exposed layer of dielectric material;
- etching said dielectric material to expose a portion said layer of conductive material;
- and
- forming a metal interconnect with said exposed portion of said conductive layer, wherein said metal interconnect is selected from the group consisting of aluminum, copper, gold, aluminum-titanium alloys and aluminum-copper alloys.
9 more elements
A semiconductor device precursor comprising:
- a substrate;
- a layer of dielectric material formed on at least a portion of said substrate;
- a layer of conductive material formed within said layer of dielectric material, said layer of conductive material contacting at least a portion of said substrate;
- and
- a layer of hard mask material formed on at least a portion of said layer of dielectric material, said layer of hard mask material having a pair of facets formed therein by anisotropic etching, said facets and said layer of dielectric material defining a via, said via exposing at least a portion of said layer of conductive material.
2 more elements
A semiconductor device comprising:
- a substrate;
- a layer of dielectric material formed on at least a portion of said substrate;
- a layer of conductive material formed within said layer of dielectric material, said layer of conductive material contacting at least a portion of said substrate;
- a layer of hard mask material formed on at least a portion of said layer of dielectric material, said layer of hard mask material having facets formed therein by anisotropic etching, said facets and said layer of dielectric material defining a via, said via exposing at least a portion of said layer of conductive material;
- and
- an interconnect material formed in said via.
3 more elements
Dependencies are inferred from the claim text.