Back to results
US 2001/0044174 A1Published application
Semiconductor device and method of fabricating the same
AssigneeNEC Corporation
InventorNobuhisa Hamatake
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising full depletion type (FD) PMOS transistors of higher Vt. The transistors for a cell unit in this semiconductor device consist of PMOS transistors formed on a SOI substrate.
Claims11
A semiconductor device comprising transistors for a cell unit consisted of PMOS transistors formed on an SOI substrate.
A method of fabricating a semiconductor device, forming transistors for a cell unit consisted of PMOS transistors formed on a SOI substrate.
Dependencies are inferred from the claim text.