Wire bonding method and apparatus, and semiconductor device

A wire bonding method comprising the steps of:

• implementing the flatly thinner plastic deformation for a wire;
• feeding out and positioning the flatly deformed wire joint section processed by said wire deforming step to a target joint surface, and holding the wire;
• and
• joining the wire to the target joint surface by releasing the hold of the wire and pressing the positioned wire joint section, with vibration being applied, onto the target joint surface with a ultrasonic wire bonder.

A semiconductor device comprising a high-power semiconductor device which includes:

• a positive terminal and an output terminal which are fixed on an insulation substrate;
• a first power element and a second diode which are joined to said positive terminal, and a second power element and a first diode which are joined to said output terminal;
• and
• a negative terminal which is fitted on said insulation substrate through an insulator,
• said first power element having its emitter electrode connected to said output terminal by wire bonding, said second diode having its cathode electrode connected to said output terminal by wire bonding, said second power element having its emitter electrode connected to said negative terminal by wire bonding, and said first diode having its anode electrode connected to said negative terminal by wire bonding,
• wherein wires to be joined by ultrasonic wire bonding to the joint surfaces of said first and second power elements and said first and second diodes are rendered at the joint sections thereof the flatly thinner plastic deformation at a degree of 2 or more in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.

A semiconductor device comprising a high-power semiconductor device which includes:

• a positive terminal and an output terminal which are fixed on an insulation substrate;
• a first power element and a second diode which are joined to said positive terminal, and a second power element and a first diode which are joined to said output terminal;
• and
• a negative terminal which is fitted on said insulation substrate through an insulator,
• said first power element having its emitter electrode connected to said output terminal by wire bonding, said second diode having its cathode electrode connected to said output terminal by wire bonding, said second power element having its emitter electrode connected to said negative terminal by wire bonding, and said first diode having its anode electrode connected to said negative terminal by wire bonding,
• wherein wires to be joined by ultrasonic wire bonding to the joint surfaces of said first and second power elements and said first and second diodes are rendered at the joint sections thereof the flatly thinner plastic deformation at a degree in the range from 4 to 6 in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.