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US 2001/0042888 A1Published application
Ferroelectric transistor and method for fabricating it
AssigneeInfineon Technologies AG
InventorsJosef Willer, Georg Braun, Till Schlosser, Thomas Haneder
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Abstract
A ferroelectric transistor is disclosed which has two source/drain regions and a channel region disposed in between in a semiconductor substrate. A metallic intermediate layer is disposed on the surface of the channel region and forms a Schottky diode with the semiconductor substrate, and a ferroelectric layer and a gate electrode are disposed on its surface. The ferroelectric transistor is fabricated using steps appertaining to silicon process technology.
Claims11
A ferroelectric transistor, comprising:
- a semiconductor substrate having a surface;
- two source/drain regions disposed in said semiconductor substrate and each having a surface;
- a channel region disposed between said two source/drain regions in said semiconductor substrate and having a surface;
- a metallic intermediate layer disposed on said surface of said channel region and forms a Schottky diode with said semiconductor substrate, said metallic intermediate layer having a surface;
- a ferroelectric layer disposed on said surface of said metallic intermediate layer and said ferroelectric layer having a surface;
- and
- a gate electrode disposed on said surface of said ferroelectric layer.
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A method for fabricating a ferroelectric transistor, which comprises the steps of:
- providing a semiconductor substrate;
- depositing a metallic intermediate layer on the semiconductor substrate and the metallic intermediate layer forms a Schottky diode with the semiconductor substrate;
- depositing a ferroelectric layer on the metallic intermediate layer;
- depositing a gate electrode layer on the ferroelectric layer;
- patterning the ferroelectric layer, the metallic intermediate layer and the gate electrode layer;
- and
- forming source/drain regions in the semiconductor substrate on two mutually opposite sides of the gate electrode.
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Dependencies are inferred from the claim text.