Gated semiconductor assemblies

A method of forming a gated semiconductor assembly, comprising:

• forming a floating gate layer over a substrate;
• forming a silicon nitride layer over the floating gate layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion;
• and
• forming a control gate over the silicon nitride layer.

A method of forming a semiconductor assembly, comprising:

• forming a first material layer over a substrate;
• forming a silicon nitride layer over the first material layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion;
• forming a photoresist layer over the silicon nitride layer;
• patterning the photoresist layer, the patterning comprising exposing portions of the layer of photoresist to light and utilizing the silicon nitride layer as an antireflective material during the exposing;
• and
• transferring the pattern from the patterned photoresist to the silicon nitride layer and the first material layer.

A gated semiconductor assembly comprising:

• a substrate;
• a polycrystalline silicon layer over the substrate;
• a silicon nitride layer over the polycrystalline silicon layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion;
• and
• a control gate over the silicon nitride layer.

A gated semiconductor assembly comprising:

• a substrate;
• a floating gate over the substrate;
• a control gate over the floating gate;
• and
• an electron barrier layer between the floating gate and the control gate, the electron barrier layer comprising a silicon nitride layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion.