MOS capacitor with wide voltage and frequency operating ranges
AssigneeSGS-Thomson Microelectronics S.A.
InventorsAndrea Ghilardelli, Stefano Ghezzi, Carla Maria Golla
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Abstract
A MOS capacitor comprises a semiconductor substrate, a first well region of a first conductivity type formed in the substrate, at least one doped region formed in the first well region, and an insulated gate layer insulatively disposed over a surface of the first well region. The at least one doped region and the insulated gate layer respectively form a first and a second electrode of the capacitor. The first well region is electrically connected to the at least one doped region to be at a same electrical potential of the first terminal of the capacitor.
Claims22
A MOS capacitor comprising
- a semiconductor substrate,
- a first well region of a first conductivity type formed in said substrate,
- at least one first doped region formed in said first well region, and
- an insulated gate layer insulatively disposed over a surface of the first well region, the at least one doped region and the insulated gate layer respectively forming a first and a second electrode of the capacitor, wherein said first well region is electrically connected to said at least one doped region to be at a same electrical potential of said first terminal of the capacitor.
A charge pump for boosting a supply voltage, the charge pump comprising:
- a MOS capacitor including:
- a semiconductor substrate,
- a first well region of a first conductivity type formed in said substrate,
- at least one first doped region formed in said first well region, and
- an insulated gate layer formed over a surface of the first well region, the at least one doped region and the insulated gate layer respectively forming a first and a second electrode of the capacitor, wherein said first well region is electrically connected to said at least one doped region to be at a same electric potential of said first terminal of the capacitor.
Dependencies are inferred from the claim text.