Ferroelectric thin-film element, sensor, and method for making the ferroelectric thin-film element
AssigneeMurata Manufacturing Co., Ltd.
InventorsXiao-min Li, Katsuhiko Tanaka
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Abstract
A ferroelectric thin-film element has a Si substrate and a thin-film laminate formed on the Si substrate, the thin-film laminate being a buffer layer epitaxially grown on the Si substrate, a metallic thin film lower electrode epitaxially grown on the buffer layer, a ferroelectric thin film orientationally grown or epitaxially grown on the lower electrode, and an upper electrode formed on the ferroelectric thin film. A portion of the thin-film laminate may be supported by air.
Claims20
A ferroelectric thin-film element comprising a Si substrate and a thin-film laminate supported at least in part by the Si substrate,
- wherein the thin-film laminate comprises an epitaxial buffer layer on the Si substrate, a lower electrode comprising an epitaxial metallic thin film on the buffer layer, a ferroelectric thin film on the lower electrode, and an upper electrode on the ferroelectric thin film.
A method for making a ferroelectric thin-film element comprising an Si substrate and a thin-film laminate formed on the Si substrate, a portion of the thin-film laminate being disposed so as to be unsupported, the method comprising:
- epitaxially growing a buffer layer on the Si substrate;
- forming a lower electrode by epitaxially growing a metallic thin film on the buffer layer;
- orientationally growing or epitaxially growing a ferroelectric thin film on the lower electrode;
- forming an upper electrode on the ferroelectric thin film;
- and
- removing a portion of at least one of the Si substrate and the buffer layer such that a part of the thin-film laminate is unsupported.
Dependencies are inferred from the claim text.