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US 2001/0042870 A1Published application
Power semiconductor and fabrication method
AssigneeInfineon Technologies AG
InventorHans-Joachim Schulze
Life of this patent
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Abstract
A power semiconductor containing an anode disposed on either a top side or a bottom side is described. A cathode is disposed on the side that is unoccupied by the anode, and edge terminations are provided on the top side. The power semiconductor is characterized in that at least one region extends from an edge termination on the top side to a semiconductor region on the bottom side in order to form an ohmic connection, and is characterized in that this at least one region is doped with sulfur.
Claims26
A power semiconductor, comprising:
- a substrate having a top side and an underside;
- an anode disposed on one of said top side and said underside;
- a cathode disposed on the other of said top side and said underside;
- edge terminations disposed on said top side;
- and
- at least one doped region disposed in said substrate and extending from one of said edge terminations on said top side to said underside of said substrate, and said doped region is continuously one of sulfur-doped and selenium-doped.
3 more elements
A method for fabricating a power semiconductor, which comprises the steps of:
- providing a substrate being a planar silicon substrate;
- forming a first power terminal on one of a top side and an underside of the substrate;
- forming a second power terminal on the other of the top side and the underside of the substrate;
- providing edge terminations for both blocking directions on the top side of the substrate;
- and
- forming a connection connecting a semiconductor region on the underside to an edge termination on the top side, forming the connection from dopant atoms selected from the group consisting of sulfur atoms and selenium atoms being indiffused into the substrate.
3 more elements
Dependencies are inferred from the claim text.