Method of depositing dielectric
OwnerClaire Louise Wigginsinventor
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Abstract
This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.
Claims8
A method of depositing dielectric on a semiconductor substrate on a support to form part of a capacitor including reactive sputtering a metal oxide layer from a target of the metal onto the substrate characterised in that the support is biased to induce a DC voltage across the depositing dielectric as it forms.
A method as claimed in any one of the preceding claims further including plasma oxidation of the oxide after or during deposition.
A method as claimed in any one of the preceding claims wherein the dielectric is deposited on a first electrode and discrete second electrodes are deposited on the upper surface to define a plurality of capacitors.
A method as claimed in any one of the preceding claims wherein the metal oxide is Tantalum Pentoxide.
Dependencies are inferred from the claim text.