Film forming method, semiconductor device manufacturing method, and semiconductor device
AssigneeCanon Sales Co., Inc.
InventorsHiroshi Ikakura, Tomomi Suzuki, Kazuo Maeda, Yoshimi Shioya, Kouichi Ohira
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Abstract
There is provided a film forming method of forming a silicon-containing insulating film 204 on a deposited substrate 103 by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.
Claims13
A film forming method for forming a silicon-containing insulating film on a substrate by plasmanizing and reacting a reaction gas that contains H2, an oxidizing gas, and a compound having siloxane bond and Si—R bond (R is alkyl group).
A film forming method for forming a silicon-containing insulating film on a substrate by plasmanizing and reacting a reaction gas that contains H2, an oxidizing gas, and a compound having siloxane bond and Si—OR bond (OR is alkoxyl group).
A film forming method for forming a silicon-containing insulating film on a substrate by plasmanizing and reacting a reaction gas that contains H2, an oxidizing gas, and a Si (silicon) compound having R (alkyl group).
A semiconductor device manufacturing method comprising:
- forming an lower copper wiring layer;
- forming an interlayer insulating film on the lower copper wiring layer;
- forming an opening or a groove in the interlayer insulating film;
- and
- forming a copper film in the opening or the groove, and on the interlayer insulating film,
- wherein the interlayer insulating film is formed by plasmanizing and reacting a reaction gas that contains H2, an oxidizing gas, and any one selected from the group consisting of a compound having siloxane bond and Si—R bond (R is alkyl group), a compound having siloxane bond and Si—OR bond (OR is alkoxyl group), and a Si (silicon) compound having R.
Dependencies are inferred from the claim text.