Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsCHEOL-JU YUN, YOUNG-MIN KWON, HEUNG-SOO PARK
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Abstract
A pre-stripping treatment solution for treatment of metal surfaces before stripping photoresist which has been used for patterning a metal layer. Also provided is a method of removing the photoresist, and a method of manufacturing semiconductor devices using the above solution and method. In one aspect of the invention, the photoresist is first ashed. The ashed resultant structure is then treated, prior to stripping of the photoresist, with a pre-stripping treatment solution of an organic acid solution having a carboxyl group is mixed with deionized water at a volume ratio of 1:0 to 1:100.
Claims19
A photoresist pre-strip treatment solution used before stripping a photoresist used as a mask after a dry etch process for manufacturing semiconductors, in which an organic acid solution having carboxyl group is mixed with deionized water at a volume ratio of 1:0 to 1:100
A method of removing a photoresist material, the method comprising the
- a) providing a surface having a portion covered by a photoresist material;
- b) ashing the photoresist material;
- c) exposing the surface and the ashed photoresist material to an organic acid solution, the organic acid solution including an organic acid having a carboxyl group and mixed with deionized water at a volume ratio of 1:0 to 1:100;
- and
- d) stripping the photoresist material.
A method of manufacturing a semiconductor device, comprising the steps of:
- a) forming a first conductive layer comprising a metal on a semiconductor substrate;
- b) forming an interlayer insulating film on the first conductive layer;
- c) applying a first photoresist mask on the interlayer insulating film, the first mask defining a hole;
- d) removing an exposed portion of the interlayer insulating film exposing a part of the first conductive layer;
- e) ashing the photoresist mask;
- f) treating the resultant structure with an organic acid including the organic acid having carboxyl group and mixed with deionized water at a volume ratio of 1:0 to 1:100;
- and
- g) stripping the first photoresist mask.
Dependencies are inferred from the claim text.