Formation of micro rough poly surface for low sheet resistance salicided sub-quarter micron poly lines
AssigneeSTMicroelectronics S.r.l.
InventorMING MICHAEL LI
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Abstract
This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.
Claims17
A method for manufacturing an integrated device having a semiconductor material substrate, comprising:
- forming a polysilicon layer on the substrate;
- forming indentations in a top surface of the polysilicon layer to create a micro-rough layer;
- patterning and removing portions of the polysilicon layer to form strips of polysilicon;
- and
- forming a silicide film on the upper surface of the polysilicon strips, the silicide film covering the micro-rough surface of the polysilicon strips.
An integrated semiconductor device, comprising:
- a semiconductor material substrate;
- a polysilicon line, said polysilicon line having micro-rough indentations on top surface portion of the polysilicon line;
- and
- a silicide film covering said micro-rough top surface portion of the polysilicon line.
Dependencies are inferred from the claim text.