Method of forming a device separation region
AssigneeOki Electric Industry Co., Ltd.
InventorKENJI SAWAMURA
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Abstract
An object of the present invention is to improve a margin for the formation of a trench device separation region at photolitho. In a method of forming a device separation region, according to the present invention to solve the above-describe problems, a plurality of trenches each serving as the device separation region are formed over a semiconductor substrate, and only resists formed above the trenches each having a width greater than a predetermined width, of the plurality of trenches are left behind. An insulating film is removed by etching with the remaining resists as masks and the remaining insulating film is removed by chemical machine polishing thereby to form the trenches buried by the insulating film.
Claims12
A method for forming a device separation region, comprising the following steps:
- a step for forming a plurality of trenches each serving as the device separation region in a semiconductor substrate;
- a step for forming an insulating film over said plurality of trenches and said semiconductor substrate;
- a step for forming resists over said insulating film;
- a step for leaving only the resists formed above the trenches each having a width larger than a predetermined width, of said plurality of trenches;
- a step for removing said insulating film by etching with said remaining resists as masks;
- and
- a step for removing the remaining insulating film by chemical machine polishing after the removal of said remaining resists and forming the trenches buried by said insulating film.
A method for forming a device separation region, comprising the following the steps:
- a step for forming a plurality of trenches each serving as the device separation region in a semiconductor substrate;
- a step for forming a first insulating film over said plurality of trenches and said semiconductor substrate;
- a step for forming resists on said first insulating film;
- a step for leaving only the resists formed above the trenches each having a width larger than a predetermined width, of said plurality of trenches;
- a step for removing said first insulating film by etching with said remaining resists as masks;
- a step for forming a second insulating film over the entire surface of said semiconductor substrate;
- and
- a step for removing said first and second insulating films by chemical machine polishing and forming the trenches buried by said insulating films.
Dependencies are inferred from the claim text.