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US 2001/0041399 A1Published application
Field-effect transistor structure with an insulated gate
AssigneeInfineon Technologies AG
InventorDietrich Bonart
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Abstract
The field-effect transistor has an insulated gate, a source electrode, a drain electrode, and an inversion channel between the source and drain electrodes and underneath the gate electrode. The gate electrode is fabricated from a material which does not have a permitted energy state in the energy interval which is used to control the charge carrier density in the inversion channel between the source electrode and the drain electrode.
Claims5
A field-effect transistor, comprising:
- a semiconductor substrate;
- a source electrode and a drain electrode formed in said semiconductor substrate;
- an inversion channel formed in said semiconductor substrate between said source electrode and said drain electrode, said inversion channel having a given energy interval for controlling a charge carrier density in said inversion channel;
- a gate electrode disposed between said source electrode and said drain electrode and fabricated from a material having no energetically permitted state in a range of the given energy interval;
- and
- an insulation layer separating said gate electrode from said inversion channel.
3 more elements
Dependencies are inferred from the claim text.