Partially removable spacer with salicide formation
OwnerPaul D. Angello, Scott W. Crowder +1inventors
InventorsPaul D. Angello, Scott W. Crowder, Peter Smeys
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Abstract
Formation of sidewalls on a gate structure in layers having a differential etch rate for certain etchants allows metallization and salicide formation annealing of a gate electrode and source/drain regions prior to shallow impurity implantation and impurity activation annealing at the location of a removable portion of a sidewall spacer establishing a gap between source/drain regions and remaining sidewalls of a gate structure. Therefore, diffusion of impurities to a greater depth and impurity deactivation during salacide formation annealing is avoided in a high performance semiconductor device such as a field effect transistor of extremely small dimensions.
Claims15
A method of semiconductor device fabrication including the steps of
- forming a composite sidewall on lateral sides of a polysilicon gate structure on a dielectric layer on a substrate,
- performing self-aligned silicidation on said polysilicon gate structure and said substrate exposed by patterning of said dielectric layer,
- partially removing said composite sidewall to expose a further area of said substrate, and
- implanting impurities in said further area of said substrate.
A semiconductor device comprising
- a gate structure,
- source/drain regions in a semiconductor layer separated from said gate structure by a gap, and
- an implanted region in said gap between a silicided source/drain region and a sidewall on a silicided gate structure.
A semiconductor device formed by a method comprising the steps of
- forming a composite sidewall on lateral sides of a polysilicon gate structure on a dielectric layer on a substrate,
- performing self-aligned silicidation on said polysilicon gate structure and said substrate exposed by patterning of said dielectric layer,
- partially removing said composite sidewall to expose a further area of said substrate, and
- implanting impurities in said further area of said substrate.
Dependencies are inferred from the claim text.