Reduction of plasma charge-induced damage in microfabricated devices
AssigneeWisconsin Alumni Research Foundation
InventorsJ. Leon Shohet, Cristian Cismaru, Francesco Cerrina
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Abstract
A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.
Claims29
A method for reducing plasma-induced charging damage in an article, comprising:
- exposing an article comprising a dielectric material, said dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the article, whereby plasma-induced charging is reduced.
An apparatus for reducing plasma-induced charging damage in an article, comprising:
- a plasma processing chamber for housing an article;
- means for generating a plasma;
- a source of vacuum-ultraviolet (VUV) radiation, said VUV radiation of an energy greater than or equal to the bandgap energy of an article to be plasma processed.
Dependencies are inferred from the claim text.