System for controlling the temperature of a reflective substrate during rapid heating

A system for heating a semiconductor wafer that is coated with a reflective material, comprising:

• a thermal processing chamber adapted to contain a semiconductor wafer;
• a semiconductor wafer contained in said thermal processing chamber, said wafer being coated with a highly reflective material;
• a heating device in communication with said thermal processing chamber for heating said semiconductor wafer contained in said thermal processing chamber, said heating device emitting light energy;
• a shield member positioned between said heating device and said semiconductor wafer, said shield member being made from a material that increases in temperature as said semiconductor wafer is heated, said shield member being capable of absorbing heat being emitted by the heating device and being reflected by said semiconductor wafer, said shield member being configured to heat said semiconductor wafer during processing.