Method of polishing silicon wafer
AssigneeSumitomo Metal Industries, Ltd.
InventorsNobuyuki Kawasaki, Masanori Mori
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Abstract
Mirror-polishing of a silicon wafer is conducted using an abrasive agent which contains silica as a principal ingredient, and either one of the ingredients set forth at (1) and (2): (1) an ingredient which is selected from alkali sulfide, alkali hydrogensulfide, and the mixture thereof; and (2) a chelate agent which contains at least α-benzoinoxime, diethyldithiocarbamic acid, cupferron, xanthogenic acid, neocupferron, beryllon II, β-quinolinol, 1,1,1-trifluoro-3(2-thenoyl)acetone, dimethylglyoxime, and 1-(2-pyridylazo)-2-naphthol.
Claims4
A method of polishing a silicon wafer using an abrasive agent comprising:
- silica as a principal ingredient;
- and
- an ingredient which is selected from alkali sulfide, alkali hydrogensulfide, and a mixture thereof.
A method of polishing a silicon wafer using an abrasive agent comprising:
- silica as a principal ingredient;
- and
- a chelate agent which contains at least α-benzoinoxime, diethyldithiocarbamic acid, cupferron, xanthogenic acid, neocupferron, beryllon II, β-quinolinol, 1,1,1-trifluoro-3(2-thenoyl)acetone, dimethylglyoxime, and 1-(2-pyridylazo)-2-naphthol.
Dependencies are inferred from the claim text.