Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method

A method for polishing a workpiece comprising:

• introducing a polishing fluid between the workpiece and a polishing implement;
• and
• effectively moving the polishing implement and the workpiece relative to one another;
• wherein the polishing fluid comprises:
• a distributed organic phase and a continuous aqueous phase, the aqueous phase having at least one complexing agent and abrasive particles dispersed therein, and the organic phase having at least one complexing agent, wherein reaction products generated during polishing interact with the aqueous phase complexing agent(s) to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and interact with the organic phase complexing agent to form organometallic complexes in the organic phase.

A method for fabricating a semiconductor device, the semiconductor device comprising one or more layers, the layer(s) having an integrated circuit disposed therein, wherein the method comprises polishing a surface of at least one of the layers by:

• introducing a polishing fluid between the surface and a polishing article;
• and
• effectively moving the device surface and the polishing article with respect to one another,
• wherein the polishing fluid comprises a distributed organic phase and a continuous aqueous phase, the aqueous phase having at least one complexing agent and abrasive particles dispersed therein, and the organic phase having at least one complexing agent, wherein reaction products generated during polishing interact with the aqueous phase complexing agent(s) to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and interact with the organic phase complexing agent(s) to form organometallic complexes in the organic phase.

A semiconductor device comprising one or more layers, the layer(s) having an integrated circuit disposed therein, wherein a surface of at least one of the layers is polished by:

• introducing a polishing fluid between the surface and a polishing article;
• and
• effectively moving the device surface and the polishing article with respect to one another,
• wherein the polishing fluid comprises a distributed organic phase and a continuous aqueous phase, the aqueous phase having at least one complexing agent and abrasive particles dispersed therein, and the organic phase having at least one complexing agent, wherein reaction products generated during polishing interact with the aqueous phase complexing agent(s) to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and interact with the organic phase complexing agent(s) to form organometallic complexes in the organic phase.