CF4+H20 Plasma ashing for reduction of contact/via resistance
AssigneeAdvanced Micro Devices, Inc.
InventorsJeffrey A Shields, Lu You, Mohammad R Rakhshandehroo
Life of this patent
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Abstract
The degradation of deposited low dielectric constant interlayer dielectrics and gap fill layers, such as HSQ layers, during formation of contacts/vias is significantly reduced or prevented by employing a plasma containing CF4+H2O to remove the photoresist mask and cleaning the contact/via opening after anisotropic etching. The CF4+H2O plasma also enables rapid photoresist stripping at a rate of about 10 to about 20 KÅ/min. Embodiments include photoresist stripping and cleaning the contact/via opening with a CF4+H2O plasma to prevent reduction of the number of Si—H bonds of an as-deposited HSQ layer below about 70%.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first dielectric layer on a substrate;
- forming a first patterned conductive layer having gaps on the first dielectric layer, the first patterned conductive layer comprising a first conductive feature having an upper surface and side surfaces;
- depositing a dielectric gap fill layer to fill the gaps;
- depositing a second dielectric layer on the first patterned conductive layer and on the gap fill layer;
- forming a photoresist mask on the second dielectric layer;
- forming a through-hole in the second dielectric layer exposing the upper surface of the first conductive feature;
- and
- removing the photoresist mask and cleaning the through-hole with a plasma containing carbon tetrafluoride (CF4) and water vapor (H2O), wherein the as-deposited gap fill layer and/or the second dielectric layer have a dielectric constant no greater than about 3.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a layer of dielectric material, having an as-deposited dielectric constant no greater than about 3, over a conductive region or conductive feature;
- forming a through-hole in the dielectric layer exposing the upper surface of the conductive region or conductive feature;
- and
- removing the photoresist mask and cleaning the through-hole with a plasma containing carbon tetrafluoride (CF4) and water vapor (H2O).
Dependencies are inferred from the claim text.