US 2001/0036709 A1 · Low cost shallow trench isolation using non-conformal dielectric material

Abstract

A method is provided for planarizing a structure such as a shallow trench isolation region on a semiconductor substrate. A semiconductor substrate is provided having raised and lowered regions with substantially vertical and horizontal surfaces. The lowered regions may correspond to trench regions. Filler material such as non-conformal high density plasma oxide may be deposited over the horizontal surfaces to at least a thickness equal to a predetermined height so as to provide raised and lowered regions of the filler material. The raised regions of the filler material may then be selectively removed without removing the filler material in the lowered regions.

Claims23

Dependent claims

A method of planarizing a structure on a semiconductor substrate, the method comprising:

providing said semiconductor substrate with raised and lowered regions with substantially vertical and horizontal surfaces, said vertical surfaces having a predetermined height;
depositing filler material over said horizontal surfaces to at least a thickness equal to said predetermined height so as to provide raised and lowered regions of filler material;
and
selectively removing said raised regions of said filler material.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

09/883,981Filed 20 Jun 2001

Priority

7 Jun 1999

Published

1 Nov 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification3 codes

H10W 10/17
Isolation regions comprising dielectric materials: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
H10W 10/0143
Using trench refilling with dielectric materials, e.g. shallow trench isolations: comprising concurrently refilling multiple trenches having…
H10W
Generic packages, interconnections, connectors or other constructional details of devices covered by

Low cost shallow trench isolation using non-conformal dielectric material

Life of this patent

Low cost shallow trench isolation using non-conformal dielectric material

Life of this patent

Abstract

Claims23