Photomask pattern shape correction method and corrected photomask

A photomask pattern shape correction method for correcting a photomask pattern of a wiring layer in which a portion overlapping a diffusion layer forms a gate electrode, wherein;

• a corner portion of a pattern of said wiring layer is in the vicinity of the vertex of an exterior angle formed by the diffusion layer;
• said method comprising steps of;
• determining said corner portion as apart from the gate electrode by a distance within a predetermined range, and
• adding a designated correction figure by applying a notch from the vicinity of a center of said corner portion.

A photomask pattern shape correction method for correcting a photomask pattern on corner portions of a wiring layer by a optical proximity effect, said method comprising steps of,

• searching said comer portions corresponding to exterior angles of said wiring layer except for any angle of approximate 180°;
• applying a first correction figure when a distance between said corner portion and a gate electrode is within a predetermined range of distance;
• applying second correction figure when the distance between said corner portion and said gate electrode is over the predetermined range of distance;
• and
• determining whether said correction figures are to be added depending on a gate width of said pattern, an interval between the gates, an interval between correction figures, and a width of the wiring pattern.

A photomask pattern shape correction method for correcting a photomask pattern of a wiring layer in which a portion overlapping a diffusion layer forms a gate electrode, comprising steps of;

• a corner portion of a pattern of said wiring layer is in the vicinity of the vertex of an exterior angle formed by the diffusion layer;
• and said method comprising steps of;
• determining said corner portion as apart from the gate electrode by a distance within a predetermined range;
• adding a designated correction figure by applying a notch from the vicinity of a center of said comer portion;
• and
• determining whether said correction figures are to be added depending on a gate width of said pattern, an interval between the gates, an interval between correction figures, and a width of the wiring pattern;
• said correction figures take different sizes between an edge in a same direction as the direction in which the gate electrode can move within the wiring layer, and another edge in a direction different from said direction in which the gate electrode can move within the wiring layer;
• and said the method further comprising steps.

A photomask pattern shape correction method, comprising steps of:

• extracting a corner portion on the basis of at least one among three conditions including, the corner portions of a pattern of a wiring layer where exterior angles except for any angle of approximate
• 180° are formed exist outside a diffusion layer, the corner portion is apart from a gate electrode by a distance within a predetermined value (Rm), and an interval between gate electrodes is equal to or more than a predetermined value (Pm);
• adding a predetermined correction figure A to an edge in a direction in which the gate electrode with respect to said corner portion being extracted can move within the wiring layer, and a correction figure B to another edge in a different direction;
• calculating an interval G1 between the correction figure B and an adjacent correction figure;
• determining whether the interval G1 obtained at said calculating step is equal to or more than a predetermined value (G1m);
• and
• eliminating the correction figure A and the correction figure B when the result of determination does not satisfy “G1>G1m ”.

A photomask pattern shape correction method, comprising steps of:

• extracting a corner portion on the basis of at least one among three conditions including, the corner portions of a pattern of a wiring layer where exterior angles except for any angle of approximate 180° are formed exist outside a diffusion layer, the corner portion is apart from a gate electrode by a distance within a predetermined value (Rm), and an interval between gate electrodes is equal to or more than a predetermined value (Pm);
• adding a predetermined correction figure A to an edge in a direction in which the gate electrode with respect to said corner portion being extracted can move within the wiring layer, and a correction figure B to another edge in a different direction;
• checking whether the interval G1 between the correction figure B and an adjacent correction figure is equal to or more than a predetermined value (G1m);
• and
• eliminating the correction figure A and the correction figure B when the result of determination does not satisfy “G1>G1m” or “G1≧G1m”.