Film forming method and semiconductor device
AssigneeCanon Sales Co., Inc.
InventorsYoshimi Shioya, Yuichiro Kotake, Youichi Yamamoto, Tomomi Suzuki, Hiroshi Ikakura, Shoji Ohgawara, Kouichi Ohira, Kazuo Maeda
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Abstract
There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
Claims19
A film forming method of forming an insulating film containing silicon on a substrate by plasmanizing a compound having siloxane bonds and an oxidizing gas to react with each other.
A film forming method of performing a film formation in a parallel plate type plasma chemical vapor deposition equipment in which an upper electrode and a lower electrode are provided to oppose to each other in a chamber, wherein an insulating film containing silicon is formed on a substrate in an atmosphere in which a high-frequency power is applied to the upper electrode and the lower electrode and a reaction gas containing (Si(CH3)3)2O and N2O is introduced into the chamber.
A film forming method of performing a film formation in a parallel plate type plasma chemical vapor deposition equipment in which an upper electrode and a lower electrode are provided to oppose to each other in a chamber,
- wherein an insulating film containing silicon is formed on a substrate in an atmosphere in which a distance between the upper electrode and the lower electrode is set to more than 25 mm, a high-frequency power is applied only to the upper electrode, and a reaction gas containing (Si(CH3)3)2O and N2O is introduced into the chamber.
A film forming method of forming an insulating film containing silicon on a substrate by plasmanizing a Si(OR)nHm;
- compound (where R is an alkyl group, n and m denotes integer satisfying n+m=4 and m≧0) and an oxidizing gas to react to each other.
Dependencies are inferred from the claim text.