Semiconductor device and manufacturing method of the device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming an organic low dielectric constant film on a substrate;
• forming a silicon-containing insulating film on said organic low dielectric constant film;
• removing a part of said silicon-containing insulating film to form a first opening;
• and
• etching said organic low dielectric constant film using said silicon-containing insulating film with said first opening as a first mask;
• wherein said step of etching said organic low dielectric constant film is carried out using a gas comprising NH3.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first organic low dielectric constant film on a substrate;
• forming a first silicon-containing insulating film on said organic low dielectric constant film;
• removing a portion of said first silicon-containing insulating film to form a first opening;
• etching said first organic low dielectric constant film using said first silicon-containing insulating film with said first opening as a first mask in order to form at least one through-hole penetrating said first organic low dielectric constant film and said first silicon-containing insulating film;
• forming a first barrier metal on an entire inside surface of said at least one through-hole;
• forming a first connection metal film on said first barrier metal film, so as to fill said at least one through-hole,
• wherein said step of etching said first organic low dielectric constant film is carried out using a gas comprising NH3.

A semiconductor device having a multilayer wiring structure, comprising:

• a substrate;
• an interlayer insulating film comprising an organic low dielectric constant film disposed on the substrate and a silicon-containing insulating film disposed on said organic low dielectric constant film;
• and
• a through-hole formed in said interlayer insulating film;
• wherein said through-hole is formed by dry etching with a gas comprising NH3 and has an aspect ratio that is larger than 1.5.