Deposition method for wiring thin film

Abstract

It is intended to solve a problem whereby Si nodules occur, in a wiring thin film deposition method, when depositing an Al wiring film on a semiconductor substrate with a sputter method using an Al—Si—Cu target. An Al3Ti film having a large amount of dissolved Si is deposited on a semiconductor substrate to form a laminate with an Al wiring film, and heat treatment is performed at a temperature of at least 400° C., to thereby absorb excessive Si into the Al3Ti film and so prevent the occurrence of Si nodules. Also, by depositing Al film at a temperature of at least 400° C. at the time of depositing the Al wiring film on the Al3Ti film, excessive Si is caused to be absorbed in the Al3Ti film. Further, at the time of depositing a Ti film on the semiconductor substrate and depositing the Al wiring film, the Al film is deposited at a temperature of at least 400° C., there is reaction between the Ti film and the Al film within the laminate, causing an Al3Ti film to be produced, and excessive Si is absorbed in the Al3Ti film produced.

Dependencies are inferred from the claim text.