Method for manufacturing semiconductor device
AssigneeSeiko Instruments Inc.
InventorHitomi Watanabe
Life of this patent
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Abstract
To resolve strain in a semiconductor substrate wafer due to high temperature nitriding of a transistor gate insulation film, and to maintain high positional accuracy for a photolithography process. After nitriding processing for a gate insulation film, by performing annealing under a nitrogen atmosphere after formation of a gate electrode film over the entire surface of a semiconductor substrate wafer, strain in the semiconductor substrate wafer is resolved without increasing contamination of the gate insulation film, and high positional precision in a photolithography process after the nitriding process is maintained.
Claims22
A manufacturing method for a semiconductor device comprising a steps of:
- forming a gate insulation film of MOS transistor, annealing in inert gas, patterning a gate electrode film and removing the gate electrode film by etching.
A manufacturing method for a semiconductor device, comprising the step of forming an EEPROM on a semiconductor substrate, between a process of forming a tunnel insulation film and a process of patterning a floating gate electrode film and removing the floating gate electrode film by etching, a step for carrying out annealing using inert gas.
A manufacturing method for a semiconductor device, comprising the steps of forming a MOS transistor on a semiconductor substrate, a process of forming a gate insulation film and a process of, after forming the gate insulation film, carrying out heat treatment in a gas atmosphere including oxygen atoms at a temperature of less than 1000° C.
A manufacturing method for a semiconductor device, comprising the steps of forming an EEPROM on a semiconductor substrate, a process of forming a gate insulation film, a process of forming a tunnel insulating film, and a process of, after forming the tunnel insulation film, carrying out heat treatment in a gas atmosphere including oxygen atoms at a temperature of less than 1000° C.
Dependencies are inferred from the claim text.