Semiconductor device baking method
AssigneeSharp Kabushiki Kaisha
InventorKazumasa Mitsumune
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Abstract
A semiconductor chip is encapsulated with resin into a plastic package so as to form a semiconductor device having the semiconductor chip in the plastic package. The semiconductor device is then received in a container so that the container is vacuumed up to a vacuum degree of 10−6 or less. Thereafter, the semiconductor device is baked at a temperature within a range of 165° C. to 175° C. for 6 hours or more by using a hot plate. Thus, this baking under the reduced pressure prevents generation of blisters and cracks on the plastic package.
Claims6
A semiconductor device baking method for baking a semiconductor device that has a semiconductor element and a resin encapsulated package, comprising the steps of:
- encapsulating the semiconductor element with resin into the resin encapsulated package;
- and
- baking the resin encapsulated package in a reduced-pressure atmosphere.
Dependencies are inferred from the claim text.