Sic composite and method of production thereof

Abstract

According to the present invention, SiC complex (M1) wherein a polycrystalline β-SiC layer (2) is grown on a surface of an a α-Sic sintered base material (1) by thermal chemical vapor deposition performed at a temperature in a range of 1,300 to 1,650° C., is subjected to heat treatment at a temperature in a range of 1,850 to 2,000° C., thereby converting an atomic arrangement of Si and C constituting a polycrystal of the polycrystalline β-SiC layer (2) into an atomic arrangement of the α-Sic sintered base material (1), so that a crystal structure in a boundary layer between the both (1) and (2) has continuity by a single crystal grain, thereby making it easy to work a reflecting mirror having a super smooth mirror surface, and ensuring the smoothness for a long time.

Dependencies are inferred from the claim text.