Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKyoichi Suguro
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Abstract
Disclosed herein is a semiconductor device that comprises a semiconductor substrate and a semiconductor substrate and a wiring layer. The wiring is formed on the semiconductor substrate and has a first region and a second region. The first region comprises a conductive film and an insulating film formed by oxidizing a film of the same material as the conductive film and connected to the conductive film. The second region is provided on the first region and includes a wiring. The Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and conductive film are oxidized.
Claims21
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a wiring layer formed on the semiconductor substrate and having a first region and a second region,
- wherein the first region comprises a conductive film and an insulating film formed by oxidizing a film of the same material as the conductive film and connected to the conductive film, said second region is provided on the first region and has a wiring, and the Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and conductive film are oxidized.
A semiconductor device comprising:
- a semiconductor substrate having a conductive region;
- a first insulating film formed on the semiconductor substrate and having a wiring groove in a surface;
- a conductive film provided on a bottom of the wiring groove and lower sides of the wiring groove;
- a second insulating film provided on upper sides of the wiring groove, formed by oxidizing a film of the same material as the conductive film and connected to the conductive film;
- and
- a wiring provided on the second insulation film, located in the wiring groove, having an upper surface at a level lower than an upper surface of the first insulating film, the Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and conductive film are oxidized.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first conductive film;
- forming a second conductive film on the first conductive film, the Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and conductive film are oxidized;
- etching a part of the second conductive film to expose a part of the first conductive film;
- and
- oxidizing the exposed part of the first conductive film to change the exposed part of the first conductive film to an insulating film.
Dependencies are inferred from the claim text.