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US 2001/0033006 A1Published application
MOS transistor in a single-transistor memory cell having a locally thickened gate oxide
AssigneeSiemens Aktiengesellschaft
InventorsLars-Peter Heineck, Giorgio Schweeger
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Abstract
A MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and a process for producing the transistor. The MOS transistor can be used as a selection transistor in a single-transistor memory cell having nitride spacers, or another spacer material acting as an oxidation barrier. The transistor also has a bird's beak in the gate oxide to reduce leakage currents. The MOS transistor can be used in a DRAM, particularly as a selection transistor.
Claims8
A MOS transistor in a single-transistor memory cell, comprising:
- a semiconductor substrate having a substrate surface, a first conductive region and a second conductive region;
- a gate oxide disposed on said substrate surface;
- a gate disposed on said gate oxide over an area between said first conductive region and said second conductive region;
- and
- an insulating spacer disposed on said side wall of said gate, said spacer acting as an oxidation barrier;
- said gate oxide insulating said gate from said semiconductor substrate and having a thickened area in a region below said side wall of said gate.
3 more elements
Dependencies are inferred from the claim text.