Super-junction semiconductor device and method of manufacturing the same

The method of manufacturing a semiconductor device including a semiconductor chip having a first major surface and a second major surface facing in opposite to the first major surface;

• a layer with low electrical resistance on the side of the second major surface;
• a first alternating conductivity type layer above the layer with low electrical resistance, the first alternating conductivity type layer including one or more first regions of a first conductivity type and second regions of a second conductivity type, the first regions and the second regions forming first pn-junctions therebetween;
• and a second alternating conductivity type layer in plane contact with the first alternating conductivity type layer, the second alternating conductivity type layer including one or more third regions of the first conductivity type and fourth regions of the second conductivity type, the third regions and the fourth regions forming second pn-junctions therebetween;
• the second pn-junctions in the second alternating conductivity type layer being spaced part from each other more widely than the first pn-junctions in the first alternating conductivity type layer, the method comprising the steps of
• (a) forming an epitaxial layer;
• (b) implanting an inpurty of the second conductivity type selectively into first surface portions of the epitaxial layer;
• (c) implanting an impurity of the first conductivity type selectively into second surface portions of the epitaxial layer;
• (d) repeating the steps (a) through (c);
• and
• (e) thermally driving all the implanted impurities, whereby to form the first alternating conductivty type layer and the second alternating conductivity type layer.