Local etching apparatus and local etching method

Abstract

A local etching apparatus and a local etching method provide a high etching rate without impairing the mirror surface of the object to be etched and free from unevenness of the etching rate, thereby enabling the entire surface of an object to be etched to be etched by a uniform etching rate. The local etching apparatus includes a plasma generator 1 to cause plasma discharge of a mixed gas of CF4 and O2 fed from a gas feeder 3 to an alumina discharge tube 2 to produce F radicals R and spraying the F radicals R from the nozzle portion 20 to a silicon wafer W on a chuck 93 so as to locally etch the silicon wafer W. At this time, a power supply 71 of a wafer heating portion 7 is turned on and a voltage adjusted by a voltage regulator 72 is supplied to a spiral-shaped heating wire 70 in the chuck 93 to heat the entire silicon wafer W to, preferably, a heating temperature of the silicon wafer W set to a temperature range of from 20° C. to 300° C.

Dependencies are inferred from the claim text.