Vacuum loadlock ultra violet bake for plasma etch

A vacuum plasma etching device for plasma etching a semiconductor wafer having a photo-resist pattern, comprising:

• a vacuum reaction chamber for performing plasma etching;
• at least one vacuum loadlock in communication with the vacuum reaction chamber, the at least one vacuum loadlock being adapted to transition from a vacuum to a non-vacuum and vice-versa;
• a vacuum pump means for selectively creating and maintaining a vacuum within the vacuum reaction chamber and the at least one vacuum loadlock;
• a control system for controlling an operation of the improved vacuum plasma etching device;
• and
• a source of ultraviolet light for selectively exposing the photo-resist pattern to ultraviolet light.

A vacuum loadlock for use in a vacuum plasma etching device for etching a semiconductor wafer having a photo-resist pattern defining where a plasma will etch the semiconductor wafer, the vacuum loadlock comprising:

• a housing having a bottom portion, a plurality of side portions, and an initially open top portion;
• a plurality of openings in the side portions, the plurality of openings being configured to allow the semiconductor wafer to pass therethrough;
• a plurality of sealing means for releasably vacuum-sealing the plurality of openings;
• an actuating means for moving the semiconductor wafer through the plurality of openings, and for locating the semiconductor wafer within the housing;
• a vacuum pump means for selectively creating and maintaining a vacuum within the housing;
• a cover member for sealingly closing the initially open top portion, the cover member having an ultraviolet light-transparent portion;
• a source of ultraviolet light for generating ultraviolet light, the source of ultraviolet light being coupled to the cover member such that the ultraviolet light passes through the ultraviolet light-transparent portion and impinges upon the photo-resist pattern;
• and
• a control system for controlling the sealing means, the actuating means, the vacuum pump means, and the source of ultraviolet light.

A method of plasma etching a photo-resist pattern on a semiconductor wafer, the method comprising:

• providing a vacuum plasma etching device for performing the plasma etching on the semiconductor wafer;
• placing the semiconductor wafer inside the vacuum plasma etching device;
• selectively exposing the photo-resist pattern to ultraviolet light while the semiconductor wafer is inside the vacuum plasma etching device;
• and
• plasma etching the semiconductor wafer.

In an existing vacuum plasma etching device for plasma etching integrated circuits into a semiconductor wafer, the existing vacuum plasma etching device having an existing process cycle time, a method of curing a photo-resist pattern on the semiconductor wafer, the method comprising the steps of:

• disposing a source of ultraviolet light within the existing vacuum plasma etching device;
• modifying the existing vacuum plasma etching device such that the photo-resist pattern may be exposed to the ultraviolet light prior to the plasma etching;
• and
• curing the photo-resist pattern during the process cycle time by selectively exposing the photo-resist pattern to the ultraviolet light.