Organic substance removing methods, methods of producing semiconductor device, and organic substance removing apparatuses

A method of producing a semiconductor device, comprising:

• the step of forming a patterned organic substance on a substrate comprising a semiconductor region;
• the step of implanting ions into the semiconductor region, utilizing the organic substance as a mask;
• and
• the organic substance removing step of removing the ion-implanted organic substance from above the substrate by utilization of a plasma of a gas containing at least oxygen,
• wherein the organic substance removing step comprises:
• the first step of introducing an oxygen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas into a reaction chamber and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing;
• and
• the second step of introducing an oxygen-containing gas into a reaction chamber without introducing a fluorine-containing gas thereinto, and generating a plasma of the gas introduced into the reaction chamber to effect a plasma processing.

A method of producing a semiconductor device, comprising:

• the step of forming a patterned organic substance on a substrate comprising a semiconductor region;
• the step of implanting ions into the semiconductor region, utilizing the organic substance as a mask;
• and
• an organic substance removing step of removing the ion-implanted organic substance from above the substrate by utilization of a plasma of a gas containing at least oxygen,
• wherein the organic substance removing step comprises:
• the first step of introducing an oxygen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas into a reaction chamber and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing;
• and
• the second step of introducing a fluorine-containing gas and an oxygen-containing gas into a reaction chamber such that the concentration of the fluorine-containing gas is not more than 0.01 vol %, and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing.

A method of producing a semiconductor device, comprising:

• the step of forming a patterned organic substance on a substrate comprising a semiconductor region;
• the step of implanting ions into the semiconductor region, utilizing the organic substance as a mask;
• and
• an organic substance removing step of removing the ion-implanted organic substance from above the substrate by utilization of a plasma of a gas containing at least oxygen,
• wherein the organic substance removing step comprises:
• the first step of introducing an oxygen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas into a reaction chamber and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing;
• and
• the second step of introducing a fluorine-containing gas, an oxygen-containing gas, and a hydrogen-containing gas into a reaction chamber such that the concentration of the fluorine-containing gas is lower than the concentration of the fluorine-containing gas introduced in the first step, and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing.

A method of producing a semiconductor device, comprising:

• the step of forming a patterned organic substance on a substrate comprising a semiconductor region;
• the step of implanting ions into the semiconductor region, utilizing the organic substance as a mask;
• and
• an organic substance removing step of removing the ion-implanted organic substance from above the substrate by utilization of a plasma of a gas containing at least oxygen,
• wherein the organic substance removing step comprises:
• the first step of introducing an oxygen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas into a reaction chamber and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing;
• and
• the second step of introducing a fluorine-containing gas, an oxygen-containing gas, and a hydrogen-containing gas into a reaction chamber such that the concentration of the hydrogen-containing gas is higher than the concentration of the hydrogen-containing gas introduced in the first step, and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing.

A method of producing a semiconductor device, comprising:

• the step of forming a patterned organic substance on a substrate comprising a semiconductor region;
• the step of implanting ions into the semiconductor region, utilizing the organic substance as a mask;
• and
• an organic substance removing step of removing the ion-implanted organic substance from above the substrate by utilization of a plasma of a gas containing at least oxygen,
• wherein the organic substance removing step comprises:
• the first step of introducing an oxygen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas into a reaction chamber and generating a plasma of the gases introduced into the reaction chamber to effect a plasma processing;
• and
• the second step of introducing into a reaction chamber a gas less prone to etch an exposed surface of the substrate than the gases introduced in the first step, and generating a plasma of the gas introduced into the reaction chamber to effect a plasma processing.

An organic substance removing apparatus for removing an organic substance having an ion-implanted region, from a substrate, comprising:

• a vessel;
• means for evacuating the vessel;
• a gas introducing system for introducing a gas containing oxygen, hydrogen, and fluorine into the vessel;
• a control device for controlling the gas introducing system;
• and
• a power supply for supplying an electric energy for inducing a plasma of the gas introduced into the vessel,
• wherein the control device sets the gas introducing system in a first mode of introducing an oxygen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas into a reaction chamber and then, after lapse of a predetermined time thereafter, transfers the gas introducing system into a second mode selected from four modes of:
• 1) a mode of introducing an oxygen-containing gas into a reaction chamber without introducing a fluorine-containing gas thereinto;
• 2) a mode of introducing a fluorine-containing gas and an oxygen-containing gas into a reaction chamber such that the concentration of the fluorine-containing gas is not more than 0.01 vol %;
• 3) a mode of introducing a fluorine-containing gas, an oxygen-containing gas, and a hydrogen-containing gas into a reaction chamber such that the concentration of the fluorine-containing gas is lower than the concentration of the fluorine-containing gas introduced in the first mode;
• and
• 4) a mode of introducing a fluorine-containing gas, an oxygen-containing gas, and a hydrogen-containing gas such that the concentration of the hydrogen-containing gas is higher than the concentration of the hydrogen-containing gas introduced in the first mode.

An organic substance removing apparatus for removing an organic substance having an ion-implanted region, from a substrate, comprising:

• a vessel;
• means for evacuating the vessel;
• a gas introducing system for introducing a gas containing oxygen, hydrogen, and fluorine into the vessel;
• a control device for controlling the gas introducing system;
• and
• a power supply for supplying an electric energy for inducing a plasma of the gas introduced into the vessel,
• wherein the control device sets the gas introducing system in a first mode of introducing an oxygen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas into a reaction chamber and then, after lapse of a predetermined time thereafter, transfers the gas introducing system into a second mode of introducing into a reaction chamber a gas less prone to etch an exposed surface of the substrate than the gases introduced in the first mode.