Semiconductor device, method of fabricating the same, and sputtering apparatus

A semiconductor device wherein a capacitor is formed on a chemical compound semiconductor substrate, wherein said capacitor comprising:

• a first electrode layer;
• a dielectric layer formed on said first electrode layer;
• and
• a second electrode layer formed on said dielectric layer.

A sputtering apparatus comprising:

• a sputtering chamber;
• a wafer stage on which a wafer is set;
• and
• a target stage on which a sputtering material is set;
• said wafer stage and said target stage being installed in said sputtering chamber;
• wherein said wafer stage comprises:
• a fixed stage fixed to said sputtering chamber;
• and
• a movable wafer holder holding said wafer and being free to rotate on said fixed stage, thereby making a sputtering incidence direction a desired direction.

A sputtering apparatus comprising:

• a sputtering chamber;
• a wafer stage on which a wafer is set;
• and
• a plurality of target stages on which a sputtering material is set respectively;
• said wafer stage and said target stages being installed in said sputtering chamber, and said target stages being disposed in positions at which sputtering incidence directions with respect to an upper surface of said wafer are mutually different;
• wherein a sputtering material set on one of said target stages is deposited over said wafer by applying a high frequency voltage between said wafer stage and said one of said target stage, thereby depositing said sputtering material over said upper surface of said wafer.